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sic power module BSM300D12P2E001 l application l circuit diagram ? motor drive ? inverter, converter ? photovoltaics, wind power generation. ? induction heating equipment. l features 1) low surge, low switching loss. 2) high-speed switching possible. 3) reduced temperature dependence. l construction this product is a half bridge module consisting of sic-dmosfet and sic-sbd from rohm. l dimensions & pin layout (unit : mm) 1/9 2015.09 - rev.a data sheet www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1 3,4 2 5 6 8 9 7 10 11 ntc
BSM300D12P2E001 l absolute maximum ratings (t j = 25c) symbol unit v dss g-s short g - s voltage (t surge <300nsec) v gss_surge d-s short i d dc (t c =60c) i drm pulse (t c =60c) 1ms * 2 i s dc (t c =60c ) i srm total power disspation * 3 ptot t c =25c w max junction temperature t jmax t jop t stg main terminals : m6 screw (*1) case temperature (t c ) is defined on the surface of base plate just under the chips. (*2) repetition rate should be kept within the range where temperature rise if die should not exceed t j max. (*3) t j is less than 175c example of acceptable v gs waveform mounting torque isolation voltage mounting to heat shink : m5 screw v 175 c n m vrms 4.5 3.5 1875 - 40 to150 - 40 to125 2500 a storage temperature drain-source voltage gate-source voltage( + ) gate-source voltage( - ) pulse (tc=60c) 1ms * 2 source current * 1 v gss d-s short operating junction temperature drain current * 1 - limit 1200 22 - 6 300 - 10 to 26 visol terminals to baseplate, f=60hz ac 1min. 600 300 600 conditions parameter + 2 6 v 0v - 6 v - 1 0 v + 2 2 v t surge t surge 2/9 2015.09 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
BSM300D12P2E001 l electrical characteristics (t j =25c) symbol min. typ. max. unit t j =25c 2.2 2.9 t j =125c 3.0 t j =150c 3.4 4.5 i dss - 3.2 m a t j =25c 1.6 2.1 t j =125c 2.2 - t j =150c 2.4 3.2 t j =25c 1.4 t j =125c 1.6 - t j =150c 1.7 v gs(th) 1.6 2.7 4.0 v 0.5 - 0.5 t d(on) 80 t r 70 t rr 50 t d(off) 250 t f 65 ciss v ds =10v, v gs =0v,100khz 35 nf gate registance r gint t j =25c - 1.6 - w ntc rated resistance r25 5.0 k w ntc b value b50/25 3370 k stray inductance ls 13 - nh terminal to heat sink 14.5 - mm terminal to terminal 15.0 - mm terminal to heat sink 12.0 - mm terminal to terminal 9.0 - mm dmos (1/2 module) * 4 0.08 sbd (1/2 module) * 4 0.11 (*4) measurement of t c is to be done at the point just beneath the chip. (*5) typical value is measured by using thermally conductive grease of =0.9w/(m k). l waveform for switching test - input capacitance junction-to-case thermal resistance r th (j-c) creepage distance clearance distance case-to-heat sink thermal resistance r th (c-f) case to heat sink, per 1 module, thermal grease appied * 5 - 0.035 gate-source threshold voltage v ds =10v, i d =68ma v m a ns parameter conditions static drain-source on-state voltage v ds(on) i d =300a, v gs =18v k/w drain cutoff current v ds =1200v, v gs =0v source-drain voltage v sd v gs =0v, i s =300a v v gs =18v, i s =300a - - gate-source leakage current i gss v gs =22v, v ds =0v v gs = - 6v, v ds =0v switching characteristics v gs(on) =18v, v gs(off) =0v v ds =600v i d =300a r g =0.2 w inductive load 3/9 2015.09 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet i d v ds 10% v gs 10% 90% 10% 10% 90% (rq ,g?9gv 2% td(on) tr 2% trr 90% 2% 2% (rii ,g?9gv td(off) tf vsurge
BSM300D12P2E001 l electrical characteristic curves (typical) fig.1 typical output characteristics [ t j =25oc ] drain current : i d [a] drain - source voltage : v ds [v] fig.2 drain - source voltage vs. drain current drain - source voltage : v ds [v] drain current : i d [a] fig.3 drain - source voltage vs. gate - source voltage [ t j =25oc ] drain - source voltage : v ds [v] gate - source voltage : v gs [v] 0 100 200 300 400 500 600 0 2 4 6 8 v gs =12v v gs =14v v gs =16v v gs =20v v gs =18v v gs =10v 0 1 2 3 4 5 6 7 8 0 200 400 600 t j =125oc t j =150oc t j =25oc v gs =18v 0 1 2 3 4 5 6 7 8 12 14 16 18 20 22 24 26 i d =400a i d =300a i d =200a i d =150a t j =25oc 0 5 10 15 20 25 30 0 50 100 150 200 250 i d =300a v gs =12v v gs =14v v gs =16v v gs =20v v gs =18v junction temperature : t j [oc] static drain - source on - state resistance : r ds(on) [m w ] fig.4 static drain - source on - state resistance vs. junction temperature 4/9 2015.09 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
BSM300D12P2E001 l electrical characteristic curves (typical) 0 100 200 300 400 500 600 0 1 2 3 4 t j =25oc t j =125oc t j =150oc t j =150oc t j =125oc t j =25oc fig.6 forward characteristic of diode source current : is [ a ] source - drain voltage : v sd [v] gate - source voltage : v gs [v] fig.7 drain current vs. gate - source voltage drain current : i d [a] fig.8 drain current vs. gate - source voltage drain current : i d [a] gate - source voltage : v gs [v] v gs =0v v gs =18v 0 100 200 300 400 500 600 0 5 10 15 t j =25oc t j =125oc t j =150oc v ds =20v 1 10 100 1000 0 5 10 15 t j =25oc t j =125oc t j =150oc v ds =20v 10 100 1000 0 1 2 3 4 t j =25oc t j =125oc t j =150oc t j =150oc t j =125oc t j =25oc fig.5 forward characteristic of diode source current : is [ a ] source - drain voltage : v sd [v] v gs =0v v gs =18v 5/9 2015.09 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
BSM300D12P2E001 l electrical characteristic curves (typical) 0 5 10 15 20 25 0 200 400 600 e off e rr e on 0 5 10 15 20 25 0 200 400 600 e off e rr e on 10 100 1000 0 200 400 600 t r t d(on) t d(off) t f 10 100 1000 0 200 400 600 t r t d(on) t d(off) t f fig.11 switching loss vs. drain current [ t j =25oc ] drain current : i d [a] fig.10 switching characteristics [ t j =150oc ] switching time : t [ns] drain current : i d [a] switching loss [mj] v ds =600v v gs(on) =18v v gs(off) = 0 v r g =0.2 w inductive load v ds =600v v gs(on) =18v v gs(off) = 0v r g =0.2 w inductive load fig.12 switching loss vs. drain current [ t j =150oc ] switching loss [mj] drain current : i d [a] v ds =600v v gs(on) =18v v gs(off) = 0v r g =0.2 w inductive load drain current : i d [a] fig.9 switching characteristics [ t j =25oc ] switching time : t [ns] v ds =600v v gs(on) =18v v gs(off) = 0 v r g =0.2 w inductive load 6/9 2015.09 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
BSM300D12P2E001 l electrical characteristic curves (typical) 10 100 1000 10000 0.1 1 10 100 t d(off) t d(on) t f t r 0.001 0.01 0.1 1 1 10 100 1000 0 200 400 600 i rr t rr 10 100 1000 10000 0.1 1 10 100 t d(off) t r t f t d(on) drain current : i d [a] recovery current : i rr [a] fig.14 recovery characteristics vs. drain current [ t j =150oc ] recovery time : t rr [ns] gate resistance : r g [ w ] fig.15 switching characteristics vs. gate resistance [ t j =25oc ] switching time : t [ns] v ds =600v i d = 300a v gs(on) =18v v gs(off) = 0v inductive load gate resistance : r g [ w ] fig.16 switching characteristics vs. gate resistance [ t j =150oc ] switching time : t [ns] v ds =600v v gs(on) =18v v gs(off) = 0v r g =0.2 w inductive load v ds =600v i d = 300a v gs(on) =18v v gs(off) = 0v inductive load 0.001 0.01 0.1 1 1 10 100 1000 0 200 400 600 i rr t rr recovery current : i rr [a] recovery time : t rr [ns] fig.13 recovery characteristics vs. drain current [ t j =25oc ] drain current : i d [a] v ds =600v v gs(on) =18v v gs(off) = 0v r g =0.2 w inductive load 7/9 2015.09 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
BSM300D12P2E001 l electrical characteristic curves (typical) 0 10 20 30 40 50 60 0.1 1 10 100 e rr e off e on 0 5 10 15 20 25 0 500 1000 1500 2000 i d =300a t j =25oc fig.18 switching loss vs. gate resistance [ t j =150oc ] switching loss [mj] gate resistance : r g [ w ] v ds =600v i d = 300a v gs(on) =18v v gs(off) = 0v inductive load fig.19 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capasitance : c [f] fig.20 gate charge characteristics [ t j =25oc ] gate - source voltage : v gs [v] total gate charge : qg [nc] 0 10 20 30 40 50 60 0.1 1 10 100 e off e rr e on fig.17 switching loss vs. gate resistance [ t j =25oc ] switching loss [mj] gate resistance : r g [ w ] v ds =600v i d = 300a v gs(on) =18v v gs(off) = 0v inductive load 1.e-10 1.e-09 1.e-08 1.e-07 0.01 0.1 1 10 100 1000 t j =25oc v gs = 0 v coss ciss crss 8/9 2015.09 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
BSM300D12P2E001 l electrical characteristic curves (typical) 0.01 0.1 1 0.001 0.01 0.1 1 10 single pulse t c =25oc per unit base dmos part : 0.08k/w sbd part : 0.11k/w time [s] fig.21 normalized transient thermal impedance normalized transient thermal impedance : rth 9/9 2015.09 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
r1 102 b www .rohm.com ? 2015 rohm co., ltd. all rights reserved. notice rohm c u stomer support sys tem h ttp://w w w . r ohm .com/con tact/ thank you for your accessing to rohm pr oduct informations. mor e detail pr oduct informations and catalogs ar e available, please contact us. the inf or mation contained herein is subject to change without notic e . bef ore y ou use our p r o d u c t s , ple a s e c o n t a c t o u r s a l e s r e p r e s e n t a t i v e and v e r i f y the l a test specifica- tions : althoug h r o h m is c o n t i n uousl y w o r king t o impro ve p roduct r elia bility and quality , semicon- duc tors c an brea k do w n and mal f unction due to va r ious f actor s . the ref o r e , i n ord e r to p r e ve n t per sonal i n jur y or fire a r isin g f rom f a ilure , please tak e saf ety meas ure s suc h a s c o m plying wit h the der ating cha r a cte r istics , imple menting redundant and f ire p r e ve nti o n d e s i g n s , and u tilizing bac k ups a nd f ail- saf e p rocedures . r o hm shall h a ve no responsibility f or an y damages ar ising out of the use of our p oducts beyond the r ating specified b y r ohm. examples of application circuits , circuit constants and an y other inf or mation contained herein are pro vided only to illustr ate the standard usage and oper ations of the products . the per iphe r al conditions m ust be tak en into account when designing circuits f or mass production. the technical inf or mation specified herein is intended only to sho w the typical functions of and e xamples of application circuits f or the products . r ohm does not grant y ou, e xplicitly or implicitl y , an y license to use or e x ercise intellectual prope r ty or other r ights held b y r ohm or an y other par ties . r ohm shall ha v e no responsibility whatsoe v er f or an y dispute ar ising out of the use of such technical in f or mation. the products specified in this document are not designed to be r adiation tole r ant. f or use of our products in applications requi r ing a high deg ree of reliability (as exemplified belo w), please contact and consult with a r ohm representati v e : tr anspo r tation equipment (i.e . cars , ships , tr ains), pr imar y comm unication equipment, tr affic lights , fire/cr ime pr e v ention, saf ety equipment, medical system s , ser v ers , solar cells , and po w er tr ansmission system s . do not use our products in applications requir ing e xtremely high reliabilit y , such as aerospace equipment, n uclear p o w er control systems , and submar ine repeater s . r ohm shall ha v e no responsibility f or an y damages or inju r y ar ising from non-compliance with the recommended usage conditions and specifications contained herein. r ohm has used reasona b le care to ensur the accur acy of the inf or mation contained in this document . ho w e v er , r ohm does not w arr ants that such inf or mation is error-free , and r ohm shall ha v e no responsibility f or an y damages ar ising from an y inaccu r acy or mispr int of such inf or mation. please use the products in accordance with an y applica b le en vironmental la ws and regulation s , such as the rohs directiv e . f or more details , including rohs compatibilit y , please contact a r ohm sales office . r ohm shall ha v e no responsibility f or an y damages or losses resulting non-compliance with a n y applica b le la ws or regulation s . when pro viding our products and technologies contained in this document to other countr ies , y ou m ust abide b y the procedures and pro visions stipulated in all applica b le e xpor t la ws and regulation s , including without limitation the us expor t administr ation regulations and the f oreign exchange and f oreign t r ade act. this document, in par t or in whol e , ma y not be repr inted or reproduced without pr ior consent of r ohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) notes
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